jiangsu changjiang electron ics technology co., ltd to-92 plastic-encapsulate transistors MPSA06 transistor (npn) features po wer amplifier maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 4 v i c collector current -continuous 0.5 a p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 r ja thermal resistance,junction to ambient 200 /w electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions m in max unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 80 v collector-emitter breakdown voltage v (br)ceo i c = 1ma , i b =0 80 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 4 v collector cut-off current i cbo v cb =80v, i e =0 0.1 a collector cut-off current i ceo v ce =60v, i b =0 0.1 a emitter cut-off current i ebo v eb =3v, i c =0 0.1 a h fe1 v ce =1v, i c = 100ma 100 400 dc current gain h fe2 v ce =1v, i c = 10ma 100 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma 0.25 v base-emitter saturation voltage v be(sat) i c = 100ma, i b =10ma 1.2 v transition frequency f t v ce =2v, i c = 10ma f = 100mhz 100 mhz to-92 1. emiltter 2. base 3. collector b,dec,2011
1 10 100 0 300 600 900 1200 10 100 10 100 1000 200 400 600 800 1000 0.1 1 10 100 110100 10 100 1000 012345 0 50 100 150 200 250 300 0 25 50 75 100 125 150 0 125 250 375 500 625 750 0.1 1 10 1 10 100 1000 1 10 100 10 100 1000 v be 500 =10 i c v besat ?? t a =100 t a =25 base-emitter saturation voltage v besat (mv) collector current i c (ma) i c f t ?? common emitter v ce = 2v t a =25 transition frequency f t (mhz) collector current i c (ma) i c ?? common emitter v ce =1v t a =100 t a =25 500 collector current i c (ma) base-emmiter voltage v be (mv) 500 =10 t a =100 t a =25 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) 2 . 4 m a MPSA06 2 . 7 m a 3 . 0 m a 2.1ma 1.8ma 1.5ma 1.2ma 0.9ma static characteristic 0.6ma i b =0.3ma common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) p c ?? t a collector power dissipation p c (mw) ambient temperature t a ( ) 300 30 2.5 f=1mhz i e =0/i c =0 t a =25 40 v cb / v eb c ob / c ib ?? c ob c ib capacitance c (pf) reverse voltage v (v) 0.4 500 common emitter v ce =1v i c h fe ?? t a =25 t a =100 dc current gain h fe collector current i c (ma) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jan,2012
|
